Product descripition:
1. High Power Capability: With a maximum drain current of 12A and a voltage ratingof 600v, the SIHF12N60E-E3 N-Channel Transistor is capable of handling highpower applications.
2. Low On-Resistance: The MOSFET's low on-resistance of 0.270 at 10V gate-sourcevoltage helps to reduce power losses and improve overall system efficiency.Fast Switching Speeds: The SIHF12N60E-E3 has a fast switching speed, with a3typical turn-on time of 15ns and a turn-off time of 45ns, making it suitable forhigh-frequency applications.
4. High Temperature Performance: The MOSFET s designed to operate at hightemperatures, with a maximum junction temperature of 150°C, making it suitablefor use in harsh environments.
5RoHS Compliant: The SIHF12N60E-E3 is compliant with the Restriction ofHazardous Substances (RoHS) directive, ensuring that it is free of harmfusubstances such as lead and mercury.
Easy to Use: The transistor comes in a TO-220 package, making it easy to integrate6into existing systems.
7. Wide Range of Applications: The SIHF12N60E-E3 can be used in a variety ofapplications, including power supplies, motor control, lighting, and inverters.
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SIHF12N60E-E3 MOSFET Power Electronics N-Channel High Efficiency Power Transistor Images
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