LND150K1-G High Power MOSFET Advanced Power Electronics Applications FETs

LND150K1-G High Power MOSFET Advanced Power Electronics Applications FETs

LND150K1-G Power MOSFET

Product Description:

The LND150K1-G Power MOSFET is a high-performance device designed to provide superior switching performance and low on-state resistance. It is designed to meet the requirements of high power applications such as DC-DC converters, motor controllers and power management systems. The device features a low-threshold voltage which allows for higher efficiency in these applications. It also features a low gate charge, low gate-source capacitance, and an integrated fast-recovery diode for improved reliability.

Product Parameters:

• Drain-Source Voltage: 600V
• Gate-Source Voltage: ± 20V
• Drain Current: 150A
• On-State Resistance: 0.0025Ω
• Threshold Voltage: 2.5V
• Power Dissipation: 350W
• Operating Temperature Range: -55°C to 175°C

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LND150K1-G High Power MOSFET Advanced Power Electronics Applications FETs Images